Datasheet 2n5089

Datasheet

Datasheet 2n5089

2N5088 2N5089 SILICON NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5088 2N5089 are silicon NPN 2n5089 transistors 2n5089 designed for low level low noise amplifier applications. RS in en IDEAL TRANSISTOR Figure 1. 2n5089 ( 2N5088 / 2n5089 2N5089) NPN GENERAL PURPOSE AMPLIFIER UTC 2N5088/ 2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise high gain general purpose amplifier applications at collector curren. KA7OEI - Optical Receivers for through- the- air communications. By continuing to use our website, you agree with our use of cookies in accordance with 2n5089 our Cookie Policy. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2. 2N5089 Amplifier Transistor( datasheet NPN Silicon) Components datasheet pdf data 2n5089 sheet FREE from Datasheet4U. Ba ABSOLUTE MAXIMUM RATING ( T A= 25℃, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector- Emitter voltage 2N5088 V CEO 30 V 2N5089 25 Collector- Base voltage 2N5088 V CBO 35 V 2N5089 30 Emitter- Base Voltage V EBO 4.

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Datasheet

2N5089 NPN General Purpose Amplifier. This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from to 50 mA. 2N5088/ 2N5089 Small Signal Low Noise Transistors ( NPN ) www. taitroncomponents. com Page 2 of 5 Thermal Characteristics ( T Ambient= 25ºC unless noted otherwise) Symbol Description 2N5088 2N5089 Unit Power Dissipation at TA= 25° C 625 mW PD Derate above 25° C 5. 0 mW/ ° C Power Dissipation at TC= 25° C 1.

datasheet 2n5089

5 W PD Derate above 25° C 12 mW/ ° C RθJA. 2N5088 MMBT5088 2N5089 MMBT5089 C E C TO- 92 B B SOT- 23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.